ultra low capacitance esd protection diode rsd6.8js2 l applications l dimensions (unit : mm) l land size figure (unit : mm) esd protection l features 1)ultra small mold type. (emd6) 2)ultra low capacitance 3)bi direction 4)high reliability l construction l structure silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol unit p mw/total tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions zener voltage v z 6.0 - 8.0 v i z =5ma reverse current i r - - 0.50 a v r =3.5v c t - 1 - pf f=1mhz,v r =0v *rating of per diode. storage temperature - 55 to + 150 parameter capacitance between terminals l taping dimensions (unit : mm) parameter limits power dissipation 150 junction temperature 150 emd6 (1) (4) (5) (3) (2) (6) *please make 3 and 6 pin open in circuit upon rohm : emd6 jeita : sc - 75a size dot (year week factory) 1/3 2011.09 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 0.4 0.45 0.25 0.15 1.0 0.5 0.5 0.25 0.15 0.3 1.55 0.130.05 0.50.05 00.1 (1) (5) (3) (6) (2) (4) 0.5 0.5 1.00.1 0.220.05 1.60.1 1.20.1 1.60.1
rsb6.8js2 0.01 0.1 1 10 6.5 7 7.5 8 8.5 ta= - 25 c ta=75 c ta=25 c ta=125 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics 0.1 1 10 100 1000 10000 100000 0 1 2 3 4 5 ta=125 c ta=25 c ta=75 c reverse voltage v r (v) v r - i r characteristics reverse current:i r (pa) 0.1 1 10 0 1 2 3 4 5 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 7.5 7.55 7.6 7.65 7.7 7.75 7.8 7.85 7.9 7.95 8 vz dispersion map zener voltage:vz( ) ave:7.64v ta=25 c i z =5ma n=30pcs 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i r dispersion map ta=25 c v r =3.5v n=30pcs ave:1.16pa reverse current:i r (pa) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ct dispersion map capacitance betweenterminals:ct(pf) ave:1.4pf ta=25 c f=1mhz v r =0v n=10pcs 2/3 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb6.8js2 10 100 1000 0.1 1 10 zener current(ma) zz - iz characteristics dynamic impedance:zz( ) 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) on glass - epoxy substrate time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 5 10 15 20 25 30 c=100pf r=1.5k c=200pf r=0 c=150pf r=330 no break at 30kv ave:1.2kv ave:15.7kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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